一种新型键合工艺的理论和实验研究  

Theoretical and Experimental Research on a Novel Silicon Directly Bonding Technology

作　　者：杨道红 徐晨[1] 董典红[1] 李兰[1] 吴畯苗[1] 张剑铭[1] 阳启明[1] 金文贤[1] 邹德恕[1] 沈光地[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院北京市光电子技术实验室,北京100022

出　　处：《北京工业大学学报》2004年第4期423-426,共4页Journal of Beijing University of Technology

基　　金：北京市教委基金资助项目(KM200310005009).

摘　　要：为了实现在较低超净环境下的硅／硅直接键合,提出了在乙醇的环境中进行硅／硅键合的方法,并建立了合理的物理模型,在常温、常压和低于10万级超净环境下,用普通的国产硅片进行了无水乙醇环境下的硅／硅直接键合实验.键合后进行了拉力强度测试和SEM观测,发现界面没有孔洞,说明键合质量达到了要求.拉力测试结果表明,其键合强度达到了10MPa,初步验证了该方法的可行性.In order to realize silicon/silicon directly bonding under the ultra-clean environment, a novel method and a physical model for silicon/silicon directly bonding with the help of alcohol were proposed in this paper. Under a one hundred thousands class clean environment and atmosphere pressure, the homemade silicon wafers directly bonding experiment was performed successfully at room temperature. The tensile test showed that the bonding tensile strength is as much as 10MPa. No inter-space in the interface was found by SEM observation. These results imply that the bonding quality is good and can meet the requirement. The method is proved to be practically feasibel.

关 键 词：微电子机械系统 硅/硅直接键合 乙醇 

分 类 号：TN365[电子电信—物理电子学]