硅衬底GaN基LED研究进展  

Research Progress of GaN-based LED on Silicon

作　　者：洪炜[1] 朱丽萍[1] 叶志镇[1] 唐海平[1] 倪贤锋[1] 赵浙[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《材料导报》2005年第1期97-100,共4页Materials Reports

基　　金：国家重点基础研究专项经费"973"资助(G20000683-06);教育部留学回国人员启动基金;教外司留[2003]406号;浙江省自然科学基金(M503183)

摘　　要：由于硅具有价格低、热导率高、大直径单晶生长技术成熟等优势以及在光电集成方面的应用潜力,GaN/Si 基器件成为一个研究热点。然而,GaN 与 Si 之间的热失配容易引起薄膜开裂,这是限制 LED 及其它电子器件结构生长的一个关键问题。近年来,随着工艺的发展,GaN 晶体质量得到大幅度的提高。同时不少研究小组成功地在Si 衬底上制造出 LED。介绍了 GaN 薄膜开裂问题及近期硅衬底 GaN 基 LED 的研究进展。GaN/Si based devices are of great interest because the silicon substrate has superior properties, such as low-cost,high thermal conductivity,potential applications in the integration of the microelectronics and opto- electronics,mature technology in growth of Si single crystal with large diameter.However,the large thermal mis- match between GaN and Si leads to the formation of cracks in the epitaxial GaN films,which is a major problem in fabricating LEDs and other structure of electronic devices.Recently,the GaN quality has improved drastically with the development of technique.Some groups have succeeded in manufacturing LED on silicon.In this paper,the crack- ing problems of GaN film and research progress of GaN-based LED on Si are outlined.

关 键 词：LED 硅衬底 光电集成 GAN薄膜 电子器件 SI衬底 失配 研究进展 成方 近期 

分 类 号：TB565.2[交通运输工程—水声工程] TN304[理学—物理]