高分辨X射线衍射法研究碳化硅单晶片中的多型结构  

Investigation on the Polytype Structure of SiC Crystal Sliceby High Resolution X-ray Diffractometry

作　　者：董捷[1] 胡小波[1] 徐现刚[1] 王继扬[1] 韩荣江[1] 李现祥[1] 

机构地区：[1]山东大学晶体材料国家重点实验室,济南250100

出　　处：《人工晶体学报》2004年第6期918-921,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金 (No .6 0 0 2 5 40 9);国家 86 3高技术计划 (No .2 0 0 1AA31 1 0 80 )资助

摘　　要：我们采用高分辨X射线衍射法对SiC单晶片中的多型结构进行了研究 ,研究发现在以 4H SiC为籽晶的晶体生长过程中 ,4H SiC、6H SiC、1 5R SiC出现两相共存或三相共存现象。在单相、两相或三相共存区 ,X射线摇摆曲线具有明显不同的特征。根据多型结构 。The polytype structure of SiC single crystal slice was investigated by high resolution X-ray diffractometry. We discovered that there are two or three phase existence of 4H-SiC, 6H-SiC, 15R-SiC in the process of the growth of 4H-SiC seed at a definite condition. At different regions the rocking curves have remarkably different features. Base on the polytype structures of SiC, the diffraction peaks can be identified in the rocking curves.

关 键 词：晶片 4H-SiC 硅单晶 高分辨X射线衍射 SIC单晶 6H-SIC 共存 摇摆曲线 晶体生长 三相 

分 类 号：O766.3[理学—晶体学] TN304[电子电信—物理电子学]