SOI/MOSFET Kink效应的模拟和分析  

Simulation and Analysis of Kink Effect in SOI/MOSFET

作　　者：王晓晖[1] 汤庭鳌[1] 郑大卫[1] 黄宜平[1] C.A.Pazde Araujo 

机构地区：[1]复旦大学电子工程系,上海200433 [2]University

出　　处：《固体电子学研究与进展》1993年第3期228-232,共5页Research & Progress of SSE

摘　　要：非全耗尽SOI/MOS晶体管由于存在“Kink效应”而限制了它的应用范围。本文考虑了沟道夹断区的碰撞电离和横向寄生晶体管效应,对浮置衬底SOI/nMOS晶体管的电流—电压特性曲线进行了理论计算,讨论了Kink效应的产生机理。计算结果与实验符合甚好。对器件参数的分析可以定性地指导抑制Kink效应的器件优化设计。The application scope of non-fully depletion SOI/MOS transistor is restricted due to Kink effect. Considering the impact ionization in channel pinch-off region and parasitic lateral transistor effect, the I-V characteristics of floated sub-strate SOI/MOSFET is calculated theoretically. The mechanism of Kink effect is discussed. The calculated results are in good agreement with the experimental data. Further analysis to the device parameters can qualitatively give direction for the op-timal device design to suppress Kink effect.

关 键 词：SOI结构 MOS场效应管 KINK效应 

分 类 号：TN386[电子电信—物理电子学]