红外区熔再结晶SOI中形貌缺陷的产生与抑制  

Formation and Inhibition of Morphological Imperfections in Infrared ZMR-SOI

作　　者：张鹏飞[1] 侯东彦[1] 杨景铭[1] 钱佩信[1] 罗台秦[1] 

机构地区：[1]清华大学微电子学研究所,香港科技大学

出　　处：《Journal of Semiconductors》1994年第11期737-740,共4页半导体学报（英文版）

基　　金：高等学校博士学科点专项科研基金

摘　　要：本文在研究多晶薄膜熔化前沿推进行为的基础上，指出ＳＯＩ晶膜形貌缺陷的产生与固液界面的温度梯度有密切关系，从而提出了一种通过减小石墨条与样品间距以抑制缺陷产生的措施．Abstract The Formation of morphological imperfections such as voids, agglomeration and surface roughness has been attributed to the explosive melting effect of thin St film. It is proved by calculations that the temperature gradient at the ,melting front decreases with the heater-sample separation.However the explosive melting effect would be reduced with increased temperature gradient. Therefore, an approach of decreasing the heater-sample separation has been proposed to inhibit the morphological imperfections.

关 键 词：SOI 再结晶 熔化 形貌缺陷 多晶硅 薄膜 

分 类 号：TN304.12[电子电信—物理电子学]