用于高压器件的实用硅－硅键合技术  

A Practical SDB Technology for High Voltage Devices

作　　者：刘学如[1] 胡泽[1] 邹修庆[1] 

机构地区：[1]电子工业部第24研究所

出　　处：《微电子学》1994年第3期10-12,共3页Microelectronics

摘　　要：本文对硅－硅键合中的关键因素进行了讨论，指出有效的键合必须以良好的原始片平整度、有效的清洗和预键合以及充分的退火处理为基础。在应用方面，对于电阻率为１７Ω·ｃｍ的有源层，得到了耐压大于４００Ｖ的ＶＤＭＯＳ器件。A practical silicon wafer direct bonding approach has been developed to fabricate high -voltage devices. It isshown that the perfect bonding must be besed on excellent wafer flatness, efficient cleaning and good pre-bonding, as wellas on thorough annealing at elevated temperature , As an application example, a VDMOS device with breakdown voltagegreater than 400V is implemented for active area having resistivity of 17Ω·cm.

关 键 词：硅-硅键合 高压器件 VDMOS 

分 类 号：TN386.1[电子电信—物理电子学]