X射线光刻对准系统图像增强技术和对准标记研究  

Study of Image Enhanced Technique and Alingnment Mark for Alignment System of X-ray Lithography

作　　者：王德强[1] 谢常青[1] 陈大鹏[1] 叶甜春[1] 刘业异[2] 胡松[2] 

机构地区：[1]中国科学院微电子研究所纳米加工与新器件集成技术实验室,北京100029 [2]中国科学院光电技术研究所,成都双流610209

出　　处：《电子工业专用设备》2005年第2期22-25,32,共5页Equipment for Electronic Products Manufacturing

基　　金：国家自然科学基金资助项目(60276019;60236010)

摘　　要：作为微细加工技术之一的高分辨率光刻技术--同步辐射X射线光刻(XRL)可应用于100nm及100nm节点以下分辨率光刻,高精度对准技术对XRL至关重要,直接影响到后续器件的生产质量。目前国内的XRL对准系统主要采用CCD相机和显微物镜采集图像,经过计算机图像处理程序进行自动对准;图像边缘分辨是图像处理部分的关键,直接决定了对准精度。针对3种不同的图像边缘增强方法进行了掩模和硅片识别精度以及对准精度的研究,并且初步设计了几种对准标记。As semiconductor device geometry shrinks down to the 100nm order for the most critical layers through Synchrotron X-ray Lithography (XRL), requirements for overlay accuracy alignment increasingly strict in the X-ray Lithography process. The alignment system of XRL includes CCD camera and microscope in the current domestic facility. The image output is analyzed by a computer for image analysis, the edge-enhanced technology of image is the critical part of the image processing. Following the text, three different methods will be introduced and some results will be given about the placement accuracy and alignment accuracy. Designing many new alignment marks to improve the alignment accuracy. Designing several different alignment marks..

关 键 词：X射线光刻 对准系统 拉普拉斯算子 对准标记 

分 类 号：TN305.7[电子电信—物理电子学]