空间限制与应变对发光多孔硅喇曼光谱的影响  

EFFECT OF PHONON CONFINEMENT AND STRAIN ON RAMAN SPECTRAFROMLIGHT-EMITTING POROUS SILICON

作　　者：杨敏[1] 黄大鸣[1] 郝平海[1] 张甫龙[1] 侯晓远[1] 王迅[1] 

机构地区：[1]复旦大学应用表面物理国家重点实验室

出　　处：《物理学报》1994年第3期494-498,共5页Acta Physica Sinica

摘　　要：发光多孔硅的喇曼光谱在５２０ｃｍ￣（－１）附近呈现一锐峰，峰位的红移随多孔度的增大而增大采用微晶模型拟合喇曼谱的线形，发现除了光学声子的空间限制效应，硅单晶的应变对峰位的移动也有显著贡献。通过谱形的拟合估算了硅微粒的应变，与已报道的Ｘ射线衍射结果相一致。在多孔硅的喇曼光诸中没有观察到起源于非晶硅的光散射信号。The typical Raman spectrum from light-emitting porous silicon shows a sharppeak near 5 20cm￣(-1). The peak wavenumber decreases with the increase of porosity.The lineshape analysis shows that both phonon confinment and strain effects in na-nocrystal silicon must be taken into account for the measured Raman spectra. Thestrain in porous silicon film is estimated and the result is consistent with that givenby X-ray diffraction studies.No light scattering from ainorphous phase is observed.

关 键 词：多孔硅 发光 散射谱 应变 空间限制 

分 类 号：O472.3[理学—半导体物理]