a－Si：H／a－SiC＿x：H超晶格的界面特性  

PRORERTIES OF INTERFACE OF a-Si:H/a-SiC_x:H SUPERLATTICE

作　　者：陈光华[1] 郭永平[1] 姚江宏[1] 宋志忠[1] 张仿清[1] 

机构地区：[1]兰州大学物理系

出　　处：《物理学报》1994年第11期1847-1853,共7页Acta Physica Sinica

摘　　要：报道等离子体化学汽相沉积法制备的ａ－Ｓｉ：Ｈ／ａ－ＳｉＣ：Ｈ超晶格的蓝移现象，用小角度Ｘ射线衍射确定超晶格的界面陡度。通过红外测量和常数光电流测量发现，超晶格界面附近存在较高浓度的Ｈ和较多的Ｓｉ－Ｃ键，界面Ｈ的热稳定性较差，界面缺陷态密度为１．２×１０￣（１１）ｃｍ￣（－２）。The a-Si:H/a-SiC_x:H superlattices were fabricated by r.f,plaslna CVD,Theblue shift of optical bandgap and construction of the superlattices were present.Theinterface abruptness was determined by low-angle X- ray diffraction. The constantphotocurrent method and IR measurement showed that there existed excess hydrogenand high concentration of Si-C bonds at a-Si:H/a-SiC_x:H interfaces. The thermalstability of interfacial hydrogen was poor. The interfacial defect density was about1.2×10￣(11)cm￣(-2).

关 键 词：氢化非晶硅 超晶格 蓝移现象 界面特性 

分 类 号：O471.4[理学—半导体物理]