深亚微米槽栅PMOS结构对抗热载流子效应的影响  

Influence of Structure Parameters on Hot-carrier-effect Immunity in Deep Sub-micron Grooved Gate PMOSFET

作　　者：任红霞[1] 张晓菊[1] 郝跃[1] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071

出　　处：《固体电子学研究与进展》2005年第1期23-28,113,共7页Research & Progress of SSE

基　　金：预研项目 99J8.1.1.DZD13 2;博士点基金资助研究 80 70 110

摘　　要：基于流体动力学能量输运模型 ,利用二维仿真软件 MEDICI对深亚微米槽栅 PMOS器件的结构参数 ,如凹槽拐角、负结深、沟道和衬底掺杂浓度对器件抗热载流子特性的影响进行了研究 ,并从器件物理机制上对研究结果进行了解释。研究发现 ,随着凹槽拐角、负结深的增大和沟道杂质浓度的提高 ,器件的抗热载流子能力增强。而随着衬底掺杂浓度的提高 ,器件的抗热载流子性能降低。结构参数影响了电场在槽栅 MOS器件的分布和拐角效应 ,从而影响了载流子的运动并使器件的热载流子效应发生变化。Based on the hydr o-dynamics energy transport model, the i nfluence of structure parameters on hot- carrier-effect immunity in deep sub-micr on grooved gate PMOSFET is studied and e xplained in terms of device interior phy sics mechanism. These investigated struc ture parameters include concave corner, negative junction depth and doping densi ty in channel and substrate. The researc h results indicate that with the increas e of concave corner, negative junction d epth and doping density in channel, the hot-carrier-effect immunity becomes bett er. While as doping density in substrate ri ses, the hot-carrier-effect immunity bec omes worse. Those are because that the s tructure parameters influence the electr ic field distribution in device and 'cor ner effect' and so do the transportation of carriers.

关 键 词：深亚微米 槽栅PMOSFET 热载流子效应 结构参数 

分 类 号：TN386.1[电子电信—物理电子学]