高介电常数栅极电介质材料的研究进展  

Progress of Studies on High Dielectric Constant Materials as Gate Dielectrics

作　　者：张化福[1] 祁康成[1] 吴健[1] 

机构地区：[1]电子科技大学光电信息学院,成都610054

出　　处：《材料导报》2005年第3期37-39,51,共4页Materials Reports

基　　金：电子科技大学青年基金(基金编号 YF020503)

摘　　要：随着半导体技术的飞速发展,作为硅基集成电路核心器件的 MOSFET 的特征尺寸正以摩尔定律的速度缩小。然而,当传统栅介质层 SiO_2的厚度减小到原子尺寸时,由于量子隧穿效应的影响,SiO_2将失去介电性能,致使器件无法正常工作。因此,必须寻找新的高介电常数材料来替代它。目前,高介电常数材料是微电子行业最热门的研究课题之一。主要介绍了栅介质层厚度减小所带来的问题(即研究高介电常数材料的必要性)、新型栅电介质材料的性能要求,并简要介绍和评述了近期主要高介电常数栅介质材料的研究状况及其应用前景。With the rapid development of semiconductor,feature size of MOSFET as the key part of inte- grated circuits is scaling down at a speed of Moore law.However,when the thickness of equivalent oxide of MOSFET is reduced to nanometer magnitude,the electron tunneling is becoming serious enough to endanger the stability and reliability of devices,so it is necessary to find a new kind of high dielectric materials,whose physical thickness is big enough to suppress the tunneling effect.In this paper,the necessity and significance of studying novel high dielectric materials,the property requirements of these high dielectric materials as gate dielectrics and the latest developments of these materials are reviewed.

关 键 词：栅介质 栅极 高介电常数材料 特征尺寸 栅电介质材料 MOSFET 集成电路 正常 研究进展 层厚 

分 类 号：TB383[一般工业技术—材料科学与工程] TN386[电子电信—物理电子学]