基于ICP工艺的垂直微小硅镜的加工(英文)  

Fabrication of Micro Vertical Mirrors on Silicon Using Inductively Coupled Plasma (ICP) Etching

作　　者：单学传 前田龙太郎[2] 池原毅[2] 

机构地区：[1]新加坡精密加工技术研究所 [2]日本产业技术综合研究所

出　　处：《纳米技术与精密工程》2005年第1期22-28,共7页Nanotechnology and Precision Engineering

摘　　要：利用自感应耦合等离子(ICP)蚀刻机进行硅深层反应离子刻蚀,得到了几微米宽的狭槽,其轮廓通常为正锥形,即蚀刻槽的宽度随着蚀刻深度的增大而减小.然而,对一个宽槽来说,由于等离子区内边界层的变形,其蚀刻宽度会随着蚀刻深度的增加而增加.在许多应用中,硅蚀刻轮廓侧面的垂直状况是一个关键性问题.叙述了分离式垂直镜的加工过程;研究了影响蚀刻轮廓的各种重要参数.经过引入多步制法与优化激励源、基底偏压源及加工压力,减小了等离子区边界层内的变形,改善了轮廓的蚀刻状况.得到的结果为:120μm高垂直微镜垂直度为89.7°,200μm高垂直微镜垂直度为89.3°.In silicon deep reactive ion etching (DRIE) using inductively coupled plasma (ICP) etcher,a narrow trench with a width of several micrometers usually shows positively tapered profile, which means that the width of the etched trench decreases with the progress of etching depth. However, for a wide trench, the width of etched profile will increase with the increase of its depth since the deformation of boundary layer in plasma. Verticality of sidewalls of etched profiles on silicon will be a critical problem in many applications. In this paper, the fabrication of isolated vertical mirrors is reported. With the introduction of multi-steps recipes and optimization of source power, substrate bias power and process pressure, the deformation in the plasma boundary layer was minimized and the etched profiles were improved. As the results, micro vertical mirrors of 120 μm high with a perpendicularity of 89.7° and mirrors of 200 μm high with 89.3° were realized.

关 键 词：蚀刻 微镜 反应离子刻蚀 等离子区 激励源 ICP 偏压 感应耦合 边界层 正锥 

分 类 号：TH74[机械工程—光学工程]