二维短沟道SOI—MOSFET/LDD结构的阈值电压  

Threshold Voltage of Two-Dimensional Short-Channel SOI-MOSFET/LDD Devices

作　　者：周婷俐[1] 

机构地区：[1]长沙交通学院

出　　处：《微电子学与计算机》1989年第6期29-31,共3页Microelectronics & Computer

摘　　要：本文提出了一种直稳态二维短沟道SOI-MOS PET/LDD结构的数值模型,所选用的基本方程是泊松方程、载流子的电流连续性方程和电流密度方程。该模型从SOI器件的结构出发,着重考虑了阈值电压随沟道长度的变化关系,提出了采用轻掺杂漏、源(LDD)结构,可以提高器件的性能。An exact number simulator for steady-state two-dimensional short-channel SOI-MOSFET/LDD devices is presented. Basic equations are poisson's equation, current continuity equations and current density equations for two kinds of carriers, The simulator studied the relation between the threshold voltage and the channel length in terms of SOI special structure lightly doped drain(LDD) structure is proposed to improve the device preformance.

关 键 词：LDD结构 MOSFET 阈值电压 场效应管 

分 类 号：TN386.1[电子电信—物理电子学]