GaN生长速率的研究  

Growth Rate of GaN Grown by MOCVD

作　　者：金瑞琴[1] 赵德刚[1] 刘建平[1] 张纪才[1] 杨辉[1] 

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083

出　　处：《Journal of Semiconductors》2005年第4期726-729,共4页半导体学报（英文版）

摘　　要：采用在位监控方法研究了MOCVD系统中GaN材料的外延生长速率与NH3流量、TMGa流量、Ⅴ/Ⅲ比等生长参数的关系.GaN生长速率随NH3流量的提高先增加后减小,而随TMGa流量的增加线性的增加.在不同NH3流量的情况下,GaN生长速率随TMGa流量增加的速率不同.GaN的生长速率与Ⅴ/Ⅲ比没有直接的关系,而与NH3,TMGa等条件有关.实验结果表明,MOCVD系统中存在着较强的预反应.预反应的程度与TMGa的流量成正比.In situ laser reflectometry is employed to investigate the growth of GaN on sapphire substrate grown by metalorganic vapor chemical deposition (MOCVD).The effect of growth parameters such as the flux of NH_3,the flux of TMGa and Ⅴ/Ⅲ ratio on the growth velocity of GaN epilayer is studied.It is found that the growth velocity of GaN does depend on the flux of NH_3 and TMGa,but not on the Ⅴ/Ⅲ ratio directly.It is suggested that the parasitic reactions existing in the MOCVD system have a strong influence on the growth velocity of GaN.There is a direct proportional relation between the magnitude of the parasitic reaction and the TMGa flux.

关 键 词：MOCVD GAN 在位监控 生长速率 

分 类 号：TN304[电子电信—物理电子学]