注氮工艺对SIMOX器件电特性的影响  

Effects of Nitrogen on Electrical Characteristics of SIMOX Devices

作　　者：张国强[1] 刘忠立[1] 李宁[1] 范楷[1] 郑中山[1] 张恩霞[2] 易万兵[2] 陈猛[2] 王曦[2] 

机构地区：[1]中国科学院半导体研究所,北京100083 [2]中国科学院上海微系统与信息技术研究所,上海200050

出　　处：《Journal of Semiconductors》2005年第4期835-839,共5页半导体学报（英文版）

摘　　要：研究了氮离子注入对SIMOX器件电特性的影响.氮注入SIMOX的埋氧层并退火后,将减小前栅MOS FET/SIMOX的阈电压,提高其漏源击穿电压但对栅击穿电压影响较小.氮注入方式对SIMOX器件的I V特性有重要影响.Effects of nitrogen on the electrical characteristics of SIMOX devices are investigated.The experimental data show that by implanting a proper dose of nitrogen ions into the buried oxide of SIMOX wafers,the threshold voltages of n channel and p channel MOSFET/SIMOX decrease,and the drain-source breakdown voltages of nMOSFETs and pMOSFETs increase,but the gate breakdown voltage changes little.Nitrogen implantation processes play a very important role in the electrical performance of the nitride SIMOX devices.

关 键 词：SIMOX MOSFET 氮 

分 类 号：TN305[电子电信—物理电子学]