铜布线化学机械抛光技术分析  

Analysis and Research on Copper Chemical-mechanical Polishing

作　　者：李秀娟[1] 金洙吉[1] 苏建修[1] 康仁科[1] 郭东明[1] 

机构地区：[1]大连理工大学

出　　处：《中国机械工程》2005年第10期896-901,共6页China Mechanical Engineering

基　　金：国家自然科学基金资助重大项目(50390061)

摘　　要：对用于甚大规模集成电路(ULSI)制造的关键平坦化工艺———铜化学机械抛光(CMP)技术进行了讨论。着重分析了铜化学机械抛光的抛光过程和相关的影响因素;根据现有的研究成果主要介绍了铜化学机械抛光的化学材料去除机理;在分析抛光液组成成分的基础上,总结了现有的以H2O2 为氧化剂的抛光液和其他酸性、碱性抛光液以及抛光液中腐蚀抑制剂的研究情况;指出了铜化学机械抛光今后的研究重点。The copper chemical-mechanical polishing (CMP) which is the key planarization technology for ULSI manufacturing was discussed. The polishing processes of copper CMP and its influence factors were introduced. Based on the research results, the material removal mechanisms of copper CMP were analyzed. According to the ingredient of slurry, the research results such as slurries that contents H2O2 as oxidant, acidic or alkaline media and the corrosive inhibitor in the slurry were summarized. In the end, the emphases of the future research were also pointed out.

关 键 词：技术分析 化学机械抛光(CMP) 铜布线 甚大规模集成电路 材料去除机理 腐蚀抑制剂 碱性抛光液 研究成果 组成成分 H2O2 研究情况 研究重点 平坦化 重分析 氧化剂 

分 类 号：TN305.2[电子电信—物理电子学] TN405.97