pMOS器件的热载流子注入和负偏压温度耦合效应  

Coupled Effect of Hot-Carrier Injection and Negative Bias Temperature in pMOSFET’s

作　　者：刘红侠[1] 郝跃[1] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071

出　　处：《Journal of Semiconductors》2005年第5期1005-1009,共5页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:60206006);博士后基金(批准号:Q6312573)资助项目~~

摘　　要：研究了在热载流子注入HCI(hot-carrier injection)和负偏温NBT(negative bias temperature)两种偏置条件下pMOS器件的可靠性.测量了pMOS器件应力前后的电流电压特性和典型的器件参数漂移,并与单独HCI和NBT应力下的特性进行了对比.在这两种应力偏置条件下,pMOS器件退化特性的测量结果显示高温NBT应力使得热载流子退化效应增强.由于栅氧化层中的固定正电荷引起正反馈的热载流子退化增强了漏端电场,使得器件特性严重退化.给出了NBT效应不断增强的HCI耦合效应的详细解释.The reliability of pMOSFET’s under HCI(hot-car rier injection) and NBT(negative bias temperature) bias conditions is studied.The current-voltage characteristics and typical device parameters shift of pMOSFET’s before and after stress are investigated.The results are compared with that of HCI and NBT stress.Measurements of degradation under two stress biases show that NBT stress at high temperature enhances hot-carrier degradation.A positive feedback hot-carrier degradation caused by positive fixed oxide charges increases the electrical field at the drain edge,which degrades the device characteristics seriously.A detailed explanation of NBT enhanced HCI is proposed.

关 键 词：PMOS器件 热载流子注入 负偏压温度不稳定性 界面态 氧化层固定正电荷 

分 类 号：TN386.3[电子电信—物理电子学]