偏压对ECR-微波等离子增强沉积ZrN薄膜的结构及性能的影响  

Structure and properties of ZrN films prepared by ECR-microwave plasma source enhanced sputtering under different bias voltages

作　　者：刘天伟[1] 董闯[2] 邓新禄[2] 陈曦[3] 

机构地区：[1]大连理工大学三束国家重点实验室,大连116024 [2]中国工程物理研究院,绵阳621900 [3]江苏大学微纳米中心,镇江212013

出　　处：《核技术》2005年第6期424-429,共6页Nuclear Techniques

基　　金：中国工程物理研究院联合基金(10176005)资助

摘　　要：利用ECR-微波等离子溅射沉积技术加不同偏压在45#钢基体上制备了ZrN薄膜。利用X射线衍射仪(XRD)、透射电子显微镜(TEM)对薄膜的微观组织结构进行了分析。结果表明,无偏压时薄膜为非晶膜,随着偏压的升高,薄膜呈ZrN晶体结构。利用扫描电镜(SEM)、原子力显微镜(AFM)测试了薄膜表面形貌。薄膜表面平整,但仍存在局部缺陷;粗糙度(RMS)在0.311—0.811nm之间变化,轮廓算术平均值(Ra)在0.239—0.629nm之间变化。同时利用电化学极化实验在0.5mol/LNaCl溶液中测试了基体及薄膜的耐蚀性能,基体自腐蚀电位Ecorr为–512.3mV,样品Ecorr在–400.3—–482.6mV之间变化,45#钢基体自腐蚀电流Icorr为9.036μA,样品Icorr在0.142—0.694μA之间变化。并讨论了偏压对薄膜的微观组织和耐蚀性能产生影响的原因。The ZrN thin films were prepared on #45 steel by using ECR-microwave plasma source enhanced sputtering. The increase of bias voltages leads to a phase transition from amorphous state to ZrN. The AFM morphology indicates that RMS of the samples, varying from 0.311 to 0.811 nm, first increases and then decreases with increasing bias voltage. The corrosion resistance of ZrN films is gradually increased with increasing bias voltages until-120 V and then decreased. Changes of corrosion resistance can be explained by a droplet type-surface defect.

关 键 词：等离子体增强沉积 非平衡磁控溅射 ZrN薄膜 偏压 

分 类 号：O484.1[理学—固体物理]