双缓冲层法在硅上外延生长GaN研究  

GaN Growth on Si (111) with Double Buffer Layers

作　　者：朱军山[1,2] 胡加辉[2] 徐岳生[1] 刘彩池[1] 冯玉春[2] 郭宝平[2] 

机构地区：[1]河北工业大学材料学院,天津300130 [2]深圳大学光电子学研究所,广东省光电子器件与系统重点实验室,光电子器件与系统教育部重点实验室,广东深圳518060

出　　处：《稀有金属》2005年第2期236-238,共3页Chinese Journal of Rare Metals

基　　金：深圳市科技计划项目 (2 0 0 2 K1 65 ) ;广东省关键领域重点突破项目 (2B2 0 0 3A10 7)

摘　　要：利用金属有机物化学金相沉积MOCVD在Si(111)衬底上,以高温AlN和低温GaN为缓冲层生长的GaN薄膜,得到GaN(0 0 0 2 )和(10-12 )的双晶X射线衍射(DCXRD)半高宽(FWHM )分别为72 1和840s。采用高分辨率DCXRD ,扫描电子显微镜(SEM )分析。结果表明,以10 40℃生长的AlN缓冲层能防止Ga与Si反应形成无定形的Si Ga结构,是后续生长的“模板”。低温的GaN缓冲层可有效减低外延层的缺陷。DCXRD测得的FWHM为0 .2 1,GaN峰强达7K。Hexagonal GaN layers were grown on Si(111) substrates using high-temperature-grown AlN and low-temperature-grown GaN as buffer layer by a vertical MOCVD. The photoluminescence spectrum showed a full width at half maximum(FWHM) of 721 and 840 s for symmetric and a symmetric. The growth and characteristics of the GaN layers were investigated by using X-ray diffraction(DCXRD) and scanning electron microscope(SEM). The experiment results indicate that the AlN buffer layer grown at 1040 ℃ can prevent to form an amorphous Ga-Si interaction. This buffer layer is followed by sequential growth. Low-temperature-grown GaN buffer layer can reduce defects on epitaxial GaN.

关 键 词：SI(111) GAN 金属有机物化学气相沉积(MOCVD) 双晶X射线衍射(DCXRD) 

分 类 号：TN304.23[电子电信—物理电子学]