用于HBT的AlGaAs/GaAs MOVPE材料  

The MOVPE Wafers for AlGaAs/GaAs HBT

作　　者：王向武[1] 黄子乾[1] 潘彬[1] 李肖[1] 张岚[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2005年第2期269-270,279,共3页Research & Progress of SSE

摘　　要：通过LP-MOVPE研制了实用化的AlGaAs/GaAsHBT材料。采用CCl4作为P型掺杂剂进行基区重掺杂。所作HBT增益为20～35,截止频率fT>50GHz,最大振荡频率fmax>60GHz,X波段功率HBT输出功率大于5W。AlGaAs/GaAs Heterostructure Bipolar Transistor (HBTs) wafers were grown using LP-MOVEPE. Carbon tetrachloride(CC1_4) was used as a P-type dopant for the base layer doping. The space layer with a thickness of 3～5 nm can largely reduce the deviation of base-emitter P-N junction relative to the AlGaAs/GaAs heterojunction. The parameters of the HBT made by the wafers is as follows:β=20～35,f_T>50 GHz, f_~max >60 GHz. The output power of X band power device >5 W.

关 键 词：异质结双极晶体管 金属有机化合物气相淀积 四氯化碳掺杂 

分 类 号：TN322.8[电子电信—物理电子学]