溅射沉积Cu膜生长的Monte Carlo模拟  

Monte Carlo Simulation of Cu Thin Film Growth by Magnetron Sputtering

作　　者：刘祖黎[1] 张雪锋[1] 姚凯伦[1] 黄运米[1] 

机构地区：[1]华中科技大学物理系,武汉430074

出　　处：《真空科学与技术学报》2005年第2期83-87,114,共6页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金(No.10174023和90103034)资助课题

摘　　要：在本文中,我们建立了一个较完整的基于动力学晶格蒙特卡罗方法的模拟薄膜生长的三维模型,利用该模型我们研究了溅射沉积条件下粒子的沉积角度、沉积速率以及入射能量对Cu膜生长的影响。模拟结果表明Cu膜表面粗糙度会随沉积角度和沉积速率的增大而增大,而相对密度随之减小。模拟的薄膜的三维形貌显示,在薄膜的表面存在着柱状结构,这与实验是相符的。Monte Carlo simulation of Cu film growth by magnetron sputtering with a three-dimensional kinetic lattice model was done. Influence of various factors, including incident angles and energies of the impinging particles, and deposition rate, on film growth was analytically evaluated. The results show that higher deposition rate and larger incident angle result in rougher surfaces. The simulated images of the film display column structures, agreeing well with the experimental results of our group and other researchers.

关 键 词：CARLO模拟 溅射沉积 蒙特卡罗方法 沉积速率 表面粗糙度 薄膜生长 三维模型 沉积条件 入射能量 模拟结果 相对密度 三维形貌 柱状结构 动力学 CU膜 增大 晶格 粒子 

分 类 号：O631.1[理学—高分子化学] O484.1[理学—化学]