GaN基HFET中极化诱导二维电子气和电流崩塌效应  

The 2DEG Induced by Polarization and Current Collapse in GaN-Based HFET

作　　者：张志国[1] 杨瑞霞[1] 李丽[1] 李献杰[2] 王勇[2] 杨克武[2] 

机构地区：[1]河北工业大学信息工程学院,天津300130 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2005年第7期50-55,共6页Semiconductor Technology

基　　金：国家安全重大基础研究973资助项目(51327030201;51327030402)

摘　　要：从纤锌矿GaN的晶体结构和微电子学理论出发,介绍了GaN基HFET中两种极化效应的物理机制,分析了二维电子气(2DEG)的形成,极化与2DEG浓度的关系以及提高2DEG浓度的方法。列举了三种典型的电流崩塌效应,分别介绍了其成因和抑制方法,并对各种抑制电流崩塌的方法进行了比较。Based on the crystal structure and microelectronics, two problems of GaN-based HFET are presented. One is the 2DEG induced by polarization phenomenon, which includes the physical mechanism of piezoelectric and spontaneous polarization, the formation of the 2DEG, the relation of the polarization and the concentration of the 2DEG and the methods of increasing the magnitude of 2DEG, the other is the current collapse, which includes referring three typical examples of current collapse, forming and suppressing of collapse and in-depth comparing about the technology of suppressing current collapse.

关 键 词：氮化镓 异质结场效应晶体管 极化效应 二维电子气 电流崩塌效应 

分 类 号：TN386[电子电信—物理电子学]