利用电子束掺杂技术制备微米、亚微米P－MOSFET器件  

Micro-Submicrometer P-MOSFET 's Fabricated Using Electron Beam Doping Technique

作　　者：李秀琼[1] 海潮和[1] 杨军[1] 

机构地区：[1]中国科学院微电子中心

出　　处：《Journal of Semiconductors》1994年第3期205-207,T001,共4页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：本文对辉光放电电子束在ＭＯＳＦＥＴ中的应用进行研究．结果表明，利用辉光放电电子束掺杂方法成功地实现了微米、亚微米Ｐ－ＭＯＳＰＥＴ．器件的漏流小，Ｉ－Ｖ特性好，源漏结浅、均匀和横向掺杂效应小．此方法与常规ＭＯＳ工艺兼容，所需的设备结构简单、操作方便，价格低廉，易于推广到ＶＬＳＩ中去．Abstract In the paper, micro-submicrometer P-MOSFET's have been investigated using a recently developed electron beam doping technique. It is shown that the doping technique can be used for fabrication of micro-submicrometer MOSFETs. The P-MOSFET's fabricated show excellent device properties: smaller leakage, good Id-Vd characteristics, shallow and uniformed junction depth and smaller effect of lateral doping for drain and source. This doping technique is compatible with conventional MOS technology. Furthermore the equipment used is not very complicated and expensive, and the process is very simple. Therefore it is a very promising technique for fabrication of devices, especially for VLSI processing.

关 键 词：场效应晶体管 MOSFET 微电子器件 

分 类 号：TN386[电子电信—物理电子学]