NO和N_2O流量对ZnO薄膜p型导电性能的影响  

Effects of NO and N_2O Flow Rates on Electronic Properties of p-type ZnO Thin Films

作　　者：周婷[1] 叶志镇[1] 赵炳辉[1] 徐伟中[1] 朱丽萍[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《无机材料学报》2005年第4期955-958,共4页Journal of Inorganic Materials

基　　金：国家重点基础研究专项经费"973"(G20000683)国家自然科学重点项目(90201038)

摘　　要：采用金属有机化学气相沉积(MOCVD)方法,由NO和N2O混合气体在玻璃衬底上沉积了p型ZnO薄膜.NO和N2O流量分别为40和25 sccm时,得到最低电阻率5.52Ω·cm, 同时样品的空穴浓度最高,为2.17×1018cm-3,电性能的稳定性也最好.全部样品放置四个月后仍为p型,但电阻率增大.Nitrogen-doped p-type zinc oxide (ZnO) thin films were deposited on glass substrates by metalorganic chemical vapor deposition (MOCVD). The p-type ZnO, with the lowest resistivity of 5.52 Omega(.)cm and the highest hole concentration of 2.17 x 10(18)CM(-3), can be achieved at the NO and N2O flow rates of 40 and 25sccm, respectively, and the sample was most stable. Four months later, all samples still showed p-type conduction, but the resistivities were increased.

关 键 词：P型ZNO 导电性能 MOCVD 

分 类 号：O472[理学—半导体物理] O485[理学—物理]