多层互连工艺中铜布线化学机械抛光研究进展  

Advances in Chemical Mechanical Polishing of Copper in Mutilevel Interconnect

作　　者：陈苏[1] 张楷亮[1] 宋志棠[1] 封松林[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所半导体功能薄膜工程技术研究中心,上海200050

出　　处：《半导体技术》2005年第8期21-24,共4页Semiconductor Technology

基　　金：国家863计划(2003AA327200);上海市纳米科技与产业发展促进中心纳米专项(0352nm016;0359nm204;0252nm084);上海市科委项目(03dz11009);基础研究项目前沿课题(2001CCA02800)

摘　　要：对ULSI中多层铜布线的CMP进行了分析,主要针对铜抛光液的研究现状以及进展进行综述,重点比较了各种不同种类抛光液的抛光效果,以及抛光液对铜和介电层的选择性研究,并提出了目前需要解决的问题,对今后铜抛光研究方向及方法进行了进一步探讨。The mechanism of CMP was described, especially the slurry of copper CMP. Kinds of polishing slurry researched nowadays were indicated and the effects of them were compared. The selectivity of polishing was considered as a most important direction of CMP researching. Finally some advice and researching measures were put forward.

关 键 词：超大规模集成电路 化学机械抛光 铜 抛光液 多层互连 

分 类 号：TN405.97[电子电信—微电子学与固体电子学]