激光干涉结晶技术制备二维有序分布纳米硅阵列  

Two-dimensional patterned nc-Si arrays prepared by the method of laser interference crystallization

作　　者：邹和成[1] 乔峰[1] 吴良才[1] 黄信凡[1] 李鑫[1] 韩培高[1] 马忠元[1] 李伟[1] 陈坤基[1] 

机构地区：[1]南京大学物理系固体微结构物理国家重点实验室,南京210093

出　　处：《物理学报》2005年第8期3646-3650,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60471021;90301009;90101020;10174035);国家重点基础研究发展规划(批准号:2001CB610503)资助的课题.~~

摘　　要：利用结合移相光栅掩模(PSGM)的激光结晶技术在超薄a-SiNx/a-Si:H/a-SiNx三明治结构样品中制备出二维有序分布的纳米硅阵列.原始样品是用等离子体增强化学气相淀积法生长.a-Si:H层厚为10nm,a-SiNx为50nm,衬底材料为SiO2/Si或熔凝石英.原子力显微镜、剖面透射电子显微镜、高分辨透射电子显微镜对样品表面形貌和微结构的观测结果表明,采用该方法可以在原始淀积的a-Si:H层中得到位置可控的晶化区域:每个晶化区域直径约250nm,具有同PSGM一致的2μm周期;晶化区域内形成的纳米硅颗粒尺寸接近原始淀积的a-Si:H层厚,且晶粒的择优取向为<111>.The method of laser-induced crystallization combining with the phase-shifting grating mask (PSGM) was carried out to fabricate nanocrystal silicon (ne-Si) with the two-dimensional (2D) patterned distribution within a-SiNx/a-Si: H/a-SiNx sandwiched structure grown on the SiO2/Si or fused quartz substrate by plasma-enhanced chemical vapor deposition technique. The thicknesses of a-Si: H and a-SiNx layer are 10 and 50 nm, respectively. The results of atomic force microscopy, cross-section transmission electron microscopy and high resolution transmission electron microscopy show that the controllable crystallized regions within the initial a-Si: H layer are selectively formed with a diameter of about 250 nm and are patterned with the same 2D periodicity of 2.0 mu m as that of the PSGM. Si nano-crystallites, the size of which is almost the same as the thickness of the a-Si:H layer, are formed in the crystallized regions, and have < 111 > preferred orientation.

关 键 词：结晶技术 纳米硅 激光干涉 阵列 分布 有序 二维 制备 高分辨透射电子显微镜 化学气相淀积法 等离子体增强 SINX 原子力显微镜 三明治结构 晶化区 SI02 衬底材料 观测结果 表面形貌 颗粒尺寸 择优取向 样品 原始 微结构 

分 类 号：TB383[一般工业技术—材料科学与工程]