类金刚石和碳氮薄膜的电化学沉积及其场发射性能研究  

Field emission properties of diamond-like carbon and carbon nitride films deposited by the electrochemical method

作　　者：叶凡[1] 谢二庆[1] 李瑞山[1] 林洪峰[1] 张军[1] 贺德衍[1] 

机构地区：[1]兰州大学物理科学与技术学院,兰州730000

出　　处：《物理学报》2005年第8期3935-3939,共5页Acta Physica Sinica

摘　　要：利用电化学方法在室温下成功地沉积了类金刚石(DLC)薄膜和非晶CNx薄膜,并对制备条件进行了讨论.通过扫描电子显微镜、傅里叶变换红外光谱技术,分析了薄膜的表面形貌和化学结合状态.场发射测量结果表明:DL膜和非晶CNx的开启场分别为8·8和10V/μm;并且在23V/μm的电场下,DLC膜和非晶CNx膜的发射电流密度分别达到10和0·37mA/cm2.Diamond-like carbon (DLC) and carbon nitride (CNx) films were deposited successfully by the electrochemical method. The conditions of deposition were discussed also. Scanning electron microscope and Fourier transform infrared technigue were used to investigate the surface morphology and the bonding structure. The results of the field emission show that the turn-on fields of DLC films and CNx films are 8.8 and 10 V/mu m respectively. Under the field of 23 V/mu m, their current densities are as high as 10 and 0.37 mA/cm(2), respectively.

关 键 词：类金刚石 碳氮薄膜 电化学沉积 场发射性能 

分 类 号：O472[理学—半导体物理] O484.4[理学—物理]