硅片的抗弯强度及其与高温抗形变能力的关系  

THE FLEXURE STRENGTH OF SILICON AFER AND THE RELATION BETWEEN IT AND ANTI-DEFORMATION ABLITY AT HIGH TEMPERATURE

作　　者：谢书银[1] 石志仪[1] 余思明[1] 

机构地区：[1]中南工业大学应用物理与热能工程系

出　　处：《中南工业大学学报》1995年第2期261-265,共5页Journal of Central South University of Technology(Natural Science)

基　　金：国家教委硅材料国家重点实验室基金

摘　　要：通过实验系统地研究了硅中氧、氮、碳含量和状态以及硅片表面损伤对室温下硅片抗弯强度的影响规律，讨论了室温抗弯强度与高温抗形变能力之间的内在联系，提出了室温抗弯强度大小可以反映硅片高温抗形变能力的观点。The effects of oxygen,nitrogen,carbon content and their configuration and surfacedamage on flexure strength of silcon wafer at room-temperature have been investigatedthrough experiments. The inherent relations between the flexure strength and ability of anti-deformation at high temperature of silicon wafer have been discussed.From these results webelieve that the flexure strength of silicon wafer may reflects its alility of anti-deformation athigh temperature to a certain degree.

关 键 词：硅片 抗弯强度 抗变形能力 高温 

分 类 号：TN304.12[电子电信—物理电子学]