纳米硅薄膜分形凝聚模型  

Fractal Aggregation Model of Hydrogenated Nano-Crystalline Silicon Films

作　　者：林鸿溢[1] 余卫武[1] 武旭辉[1] 何宇亮[1] 

机构地区：[1]北京理工大学电子工程系,北京航空航天大学非晶态物理研究室

出　　处：《Journal of Semiconductors》1995年第8期567-573,共7页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：从分析纳米硅（ｎｃ－Ｓｉ：Ｈ）薄膜生长过程的特点出发，提出与扩散限制凝聚（ＤＬＡ）模型不同的ｎｃ－Ｓｉ：Ｈ薄膜分形凝聚模型：扩散与反应限制凝聚（ＤＲＬＡ）模型．获得的结果与实验结果符合得很好．ｎｃ－Ｓｉ：Ｈ薄膜是利用等离子体增强气相淀积方法制备的．文中讨论了ｎｃ－Ｓｉ：Ｈ薄膜的结构特点与分形凝聚之间的关系．Abstract Based on the analysis of growth process of the hydrogenated nano-crystalline silicon(nc-Si: H) films,a fractal growth model called diffusion and reaction limited aggregation (DRLA) model is proposed. It is different from diffusion limited aggregation (DLA) model. The hydrogenated nano-crystalline silicon films were prepared by plasma enhanced chemical vapor deposition (PECVD) method. Computer simulation of the DRLA model has been done, the results are in agreement with the experimental results. The relationship between the structure of hydrogenated nano-crystalline silicon and fractal aggregation of nc-Si: H film has also been discussed.

关 键 词：纳米硅薄膜 分形凝聚模型 半导体薄膜 薄膜 

分 类 号：TN304.12[电子电信—物理电子学]