定域再结晶SOI的透射电镜研究  

TEM Study on Locallized Recrystallization SOI

作　　者：刘安生[1] 邵贝羚[1] 李永洪[1] 刘峥[1] 张鹏飞[1] 钱佩信[1] 

机构地区：[1]北京有色金属研究总院,清华大学微电子学研究所

出　　处：《Journal of Semiconductors》1995年第10期736-740,共5页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：高频感应石墨条加热快速区熔再结晶工艺制备的无籽晶热沉积结构（Ｈｅａｔ－ＳｉｎｋＳｔｒｕｃ－ｔｕｒｅ）ＳＯＩ（ＳｉｌｉｃｏｎｏｎＩｎｓｕｌａｔｏｒ）硅薄膜具有［１００］取向，其缺陷被限制在厚ＳｉＯ２层上的硅膜中，使薄的ＳｉＯ２层上的硅膜成为无缺陷单晶区，宽度可达５０μｍ以上，在缺陷聚集区观察到的缺陷主要是小角度晶界，绝大多数晶界的取向差都在３°之内．其类型多为混合型晶界，也观察到少量的扭转型和倾斜型晶界．缺陷聚集区中的位错或位错网络的走向是各种各样的，但其位错的柏氏矢量．Abstract Transmission electron microscope(TEM)analyses show that silicon film of heat-sink structure SOI(silicon on insulator) prepared by unseeded rapid zone-melt-recrystallisation(RZMR)process with a RF-induced graphite strip heater system,has its normal in (100)orientation.The process used in this strdy can effectively confine the defects in the predetermined Si strips lying on the thicker parts of the SiO2 layer,and makes the orther Si strips on the thinner perts of SiO2 layer defect-free in a width of more than 50μm.The most commonly observed defects in the defect entrainment regions are sybgrain boundaries(SGBs).The angular discontinuity in the crystallographic orientation at SGB is in an extent less than three degrees.Both pure tilt and twist SGBs may exist in the RZMR Si film,but the most SGBs observed in the experiment are of the mixed type. The dislocations and dislocation networks in defect entrainment regions run in various directions,andthe Burgers vector of these dislocations is.

关 键 词：SOI 再结晶 透射电镜 硅薄膜 

分 类 号：TN303[电子电信—物理电子学]