室温连续的新结构垂直腔面发射半导体激光器  

Room Temperature CW Novel Vertical-Cavity Surface-Emitting Semiconductor Lasers

作　　者：刘颖[1] 杜国同[1] 姜秀英[1] 刘素平[1] 张晓波[1] 赵永生[1] 高鼎三[1] 林世鸣[1] 康学军[1] 高洪海[1] 高俊华[1] 王红杰[1] 

机构地区：[1]集成光电子学国家重点联合实验室吉林大学实验区,中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1995年第12期951-954,共4页半导体学报（英文版）

基　　金："863"高技术基金

摘　　要：本文报道了室温连续激射的ＧａＡｓ／ＧａＡＩＡＳ新结构垂直腔面发射半导体激光器的最新研究结果．该器件结构是采用钨丝掩膜四次质子轰击方法制备的，这种方法是目前报道的垂直腔面发射激光器制作工艺中最简单的．对于直径１５μｍ的钨丝，器件的最低阈值电流为１７ｍＡ，最大光输出功率达４ｍＷ，微分量子效率高达６５％．Abstract A RT CW novel GaAs/GaAIAs vertical-cavity surface-emitting semiconductor laser is reported. The structure is obtained by four times deep H+ implantations using the crossed tungsten wire as the implantations mask. The fabrication process is the simplest ever reported in vertical-cavity surface-emitting lasers fabrication. The lasing wavelength of about 8 7 1 nm, the lowest threshold current of 1 7 mA, the largest output power of 4.0 mW and the maximum differential quantum efficiency of 65% were obtained.

关 键 词：半导体激光器 砷化镓 GAALAS 激光器 

分 类 号：TN248.4[电子电信—物理电子学]