硅二极菅脉冲中子辐照效应的研究  

INVESTIGATION OF IRRADIATION EFFECT OF PULSE NEUTRONS IN SILICON DIODE

作　　者：吴凤美[1] 施毅[1] 杭德生[1] 肖晟[1] 赖启基[1] 赵丽华[1] 李国华[1] 周荷秀[1] 

机构地区：[1]南京大学物理系,河北半导体研究所

出　　处：《南京大学学报（自然科学版）》1995年第4期548-551,共4页Journal of Nanjing University（Natural Science）

摘　　要：对加固Ｐ＋ｎｎ＋高压整流二极营进行了脉冲中子辐照和热中子辐照。ＤＬＴＳ测量表明，脉冲中子辐照（Φｎ＝８．６×１０１３ｎ／ｃｍ２）在硅中引入的缺陷主要是双空位Ｅ４和Ｅ３缺陷，氧空位和双空位缺陷强度很低。氧空位密度的降低可归因于辐照缺陷的衰减和再构。脉冲中子辐照引起Ｆｒｅｎｋｅｌ对成份的增加，增加的空位密度致使复杂络合物，例如（Ｏ十Ｖ２）或（Ｏ十Ｖ３）缺陷的有效产生。实验结果还表明，该类器件具有良好的耐辐照特性。文中还对退火特性进行了讨论。退火使氧空位和双空位Ｅ２增加，这可能是Ｖ２Ｏ、Ｖ３Ｏ分解所致。Hardening p+nn+ high-voltage dioes Were irradiated by pulse neutrons and thermal neturope.The results of DLTS measurement show that the primary defects are the divacancy E4 and E3 defects in Silicon radiated by pulse neutron and that the densities of the oxygen-vacancy and the divacancy E2(V2-) are very low.The decrease of the density of the oxygen-vacancy is attributable to the decay and reconstruction of rediation defects.Pulse neutron irradiations give rise to higher generation rates for Frenkel pair componnts and the increasing of defects of a more complex nature, such as O +V2 or O +V3.The experimental results show the antiradiation advantage of this device.Finally,the annealing behaviors are also discussed in this paper.Annealing Causes the increase of the Oxygen-vacancy the E2 defects.We attribute the phenomenon to dissociation of V2O and V3O complicated complex.

关 键 词：脉冲中子 辐照效应 二极管 氧空位 硅二极管 

分 类 号：O474[理学—半导体物理] TN315.2[理学—物理]