InGaAs量子阱垂直腔面发射激光器  

InGaAs QUANTUM WELL VERTICAL CAVITY SURFACE EMITTING LASER

作　　者：刘颖[1] 杜国同[1] 姜秀英[1] 刘素平[1] 张晓波[1] 赵永生[1] 高鼎三[1] 林世呜 高洪海[2] 高俊华[2] 王洪杰[2] 康学军[2] 

机构地区：[1]吉林大学电子工程系集成光电子学国家重点联合实验室吉林大学实验区 [2]中国科学院半导体研究所

出　　处：《红外与毫米波学报》1996年第3期218-220,共3页Journal of Infrared and Millimeter Waves

摘　　要：报道了一种新型的具有ＩｎＧａＡｓ量子阱结构有源区的垂直腔面发射激光器．采用钨丝作为掩膜，通过两次垂直交叉Ｈ＋质子轰击工艺制备器件，初步实现了室温脉冲工作，最低阈值电流达２０ｍＡ，激射波长为９１５ｎｍ。A novel vertical cavity surface emitting laser with InGaAs quantum wells active region was reported.The structure was obtained by deep implantation of H + twice, with the crossed tungsten wire as the implantation mask.The lasing wavelength is about 915nm and the lowest threshold current is 20mA under a pulsed condition.The minimum series resistance of the device is 120Ω.

关 键 词：INGAAS 量子阱 面发射 激光器 

分 类 号：TN248.4[电子电信—物理电子学]