不同沟道长度对n沟MOSFET退化特性的影响  

Effects of Channel Length on Degradation Characteristics of n-MOSFET's

作　　者：黄美浅[1] 朱炜玲[1] 章晓文[2] 陈平[1] 李观启[1] 

机构地区：[1]华南理工大学应用物理系,广东广州510640 [2]信息产业部电子第五研究所,广东广州510610

出　　处：《微电子学》2005年第5期449-452,共4页Microelectronics

摘　　要：研究不同沟道长度n沟道MOS场效应晶体管的热载流子效应对其退化特性的影响。实验结果表明,随着器件沟道长度的减小,其跨导退化明显加快,特别是当沟道长度小于1 mm时更是如此。这些结果可以用热载流子注入后界面态密度增加来解释。Effects of channel length on degradation characteristics of n-MOSFET＇ s have been investigated. As the channel length of the device decreases, especially when it is shorter than 1 mm, its transconductance degrades significantly faster. The results can be explained by increased interface state density after hot carrier injection.

关 键 词：MOS场效应晶体管 热载流子效应 阈值电压 跨导 退化特性 

分 类 号：TN386.1[电子电信—物理电子学]