携带气体对二氧化硅干法刻蚀的影响  

Effects of Gas Carriers on Dry Etching of Silicon Dioxide

作　　者：敬小成[1] 黄美浅[1] 姚若河[1] 

机构地区：[1]华南理工大学物理科学与技术学院,广东广州510640

出　　处：《微电子学》2005年第5期456-460,共5页Microelectronics

摘　　要：文章研究了采用氩气和氦气作携带气体时气体流量对刻蚀速率、均匀性和选择比等主要刻蚀参数的影响。实验结果表明,当采用氩气作携带气体时,其流量选择在氩气∶刻蚀气体≈1∶1时,刻蚀结果优化;当选择氦气作携带气体时,其流量选择在氦气∶刻蚀气体≈2∶1时,刻蚀结果优化。氩气和氦气相比,氩气更具优越性。Argon and helium are often used as gas carriers in dry etching of silicon dioxide. Effects of argon or/ and helium on the etching rate, uniformity, and selectivity to different substrate materials are investigated, Experiments show that, when argon is used to obtain an optimized etching, the flux ratio of argon and reactive gases should be adjusted to approximately 1 ： 1, On the other hand, when helium is used, a 2 ： 1 ratio is preferable. Compared with helium, argon is believed to be a better gas carrier.

关 键 词：半导体工艺 氩气 氦气 干法刻蚀 等离子体 

分 类 号：TN304[电子电信—物理电子学] TN305