Ni金属诱导晶化非晶硅(a-Si∶H)薄膜  

Ni Induced Lateral Crystallization of Amorphous Silicon Thin Film

作　　者：黄金英[1] 赵玉环[1] 张志伟[1] 荆海[1] 凌志华[2] 

机构地区：[1]中国科学院长春光学精密机械与物理研究所北方液晶研究开发中心,吉林长春130031 [2]中国科学院长春光学精密机械与物理研究所激发态物理重点实验室,吉林长春130033

出　　处：《液晶与显示》2005年第5期397-400,共4页Chinese Journal of Liquid Crystals and Displays

基　　金：国家高技术研究发展计划("863"计划)资助项目(No.2002AA3250);吉林省科技发展计划资助项目(No.20030304)

摘　　要：对在氢化非晶硅薄膜(a-Si∶H)上溅射金属Ni的样品进行金属诱导晶化(MIC)/金属诱导横向晶化(MILC),制备多晶硅薄膜(p-Si)的工艺及薄膜特性进行了研究。XRD测量结果表明非晶硅在500℃退火1 h后就已经全部晶化。金属诱导晶化的优选晶向为(220),而且晶粒随退火时间的延长而长大。非晶硅薄膜样品500℃下退火6 h后的扫描电镜照片显示,原金属镍覆盖区非晶硅全部晶化,晶粒均匀,平均晶粒大小约为0.3μm,而且已经发生横向晶化。EDS测试Ni在晶化的非晶硅薄膜中的原子百分含量分析表明,金属Ni在MILC过程中的作用只是催化晶化,除了少量残留在MILC多晶硅中外,其余的Ni原子都迁移至晶化的前沿。500℃下退火20 h后样品的Raman测试结果也表明,金属离子向周边薄膜扩散,横向晶化了非晶硅薄膜。Process and material characterization of crystallization of amorphous silicon （a-Si） by metal-induced crystallization （MIC） and metal-induced lateral crystallization （MILC） using sputtered Ni on amorphous silicon film to prepare polysilicon （p-Si） film were investigated. The results of the XRD measurements show that a-Si was fully crystallized at 500 ℃ after 1 h heat treatment. MIC polysilicon grains are （220）-oriented and grain size increased with extending heat treatment. The SEM photograph shows that the grains are uniformity and about 0.3 μm after 6 h heat treatment at 500 ℃ and MII.C was observed. EDS analysis results of Ni atoms percentage in MIC and MILC poly-Si films indicated that Ni atoms catalyzed the crystallization of the a-Si film. During the crystallization, little amount of Ni remained in the MII.C poly-Si because Ni atoms propagated along with the poly-Si grain growth. Raman spectra for sample annealed for 20 h at 500℃ indicated that a-Si： H film was crystal- lized by Ni diffusing in a-Si： H film sideward and downward.

关 键 词：氢化非晶硅 多晶硅 金属诱导晶化 金属诱导横向晶化 

分 类 号：TN27[电子电信—物理电子学] O484.1[理学—固体物理]