Au／AuGeNi／n－GaAs欧姆接触失效机理的研究  

Failure Mechanisms of An/AuGeNi/n-GaAs Ohmic Contacts

作　　者：李志国[1] 李静[1] 孙英华[1] 郭伟玲[1] 吉元[1] 程尧海[1] 严永鑫[1] 李学信[1] 

机构地区：[1]北京工业大学电子工程系

出　　处：《微电子学》1996年第4期226-229,共4页Microelectronics

摘　　要：对Ａｕ／ＡｕＧｅＮｉ／ｎ－ＧａＡｓ欧姆接触进行了三种不同的应力试验：（１）高温存储（ＨＴＳ），（２）常温大电流（ＨＣ），（３）高温适当电流。试验结果表明，三种试验均造成了试验后期欧姆接触电阻增大，最后导致欧姆接触失效。ＡＥＳ分析表明，试验后的样品发生了Ｎｉ、Ａｎ和ＧａＡｓ的互扩散。To investigate failure mechanisms of An/AuGeNi/n-GaAs ohmic contact,three different tests were conducted on the stress of the contact. These tests are high temperature storage,high current at normal temperature and moderate current at high temperature. It has been shown that all three tests have caused the ohmic contact resistance to increase at the end of the tests,which leads to the failure of the contact. Auger electron spectrum indicates an inter-diffusion of Ni, Au and GaAs for the tested samples.

关 键 词：半导体器件 Ⅲ-Ⅴ族 化合物半导体 欧姆接触 

分 类 号：TN304.23[电子电信—物理电子学] TN305.93