Ar/CHF_3反应离子束刻蚀SiO_2的研究  

Research on Ar/CHF_3 Reactive Ion Beam Etching of SiO_2

作　　者：王一鸣[1] 熊瑛[1] 刘刚[1] 田扬超[1] 

机构地区：[1]中国科学技术大学国家同步辐射实验室,合肥230029

出　　处：《微细加工技术》2005年第3期67-70,共4页Microfabrication Technology

摘　　要：介绍了Ar/CHF3反应离子束刻蚀和离子束入射角对图形侧壁陡直度及刻蚀选择比的影响。使用紫外曝光技术在SiO2基片上获得光刻胶掩模图形,采用Ar+CHF3来刻蚀石英基片,调节二者的流量配比,混合后通入离子源。在Ar和CHF3的流量比为1∶2,总压强为2×10-2Pa,离子束流能量为450 eV,束流为80 mA,加速电压220 V^240 V,离子束入射角15°并旋转样品台的情况下,刻蚀20 min后,得到光栅剖面倾角陡直度为80°~90°。同时发现,添加CHF3后,提高了SiO2的刻蚀速率和刻蚀SiO2与光刻胶的选择比,最高可达7∶1。Ar/CHF3 reactive ion beam etching（RIBE） and the ion beam incidence angle could have great influence on the pattern＇s sidewall angle and the selectivity for etching the SiO2 wafer with a photoresist mask. In this experiment, the photoresist mask on the SiO2 wafer was obtained by the UV lithography, then the wafer was etched by Ar/CHF3 RIBE. The reactive gas CHF3 and the inert gas Ar were mixed before introduced into the ion source. The etched pattern＇s sidewall angle was gotten about 80 °～90° as the flux rate ratio of Ar： CHF3 is 1：2, the total pressure 2 × 10^-2 Pa, the ion beam energy 450 eV, the beam current 80 mA, the accelerate voltage 220 V～240 V, the tilted ion beam incidence angle 15 °, the SiO2 wafer being rotated and the etching time is 20 min. After the CHF3 gas being added, the etching rate of SiO2 increased and the etching selective ratio of SiO2 to photoresist also increased with maximum ratio 7 ： 1.

关 键 词：反应离子束刻蚀 入射角 侧壁陡直度 选择比 

分 类 号：TN405.983[电子电信—微电子学与固体电子学]