纳米Si薄膜的结构及压阻效应  

THE STRUCTURE AND PIEZO-RESISTANCE EFFECT OF HYDROGENATED NANO-Si FILMS

作　　者：何宇亮[1] 林鸿溢[1] 武旭辉[1] 余明斌[1] 于晓梅[1] 王珩[1] 李冲[1] 

机构地区：[1]北京航空航天大学非晶态物理与光信息研究室,北京理工大学电子工程系,西安交通大学电子工程系

出　　处：《材料研究学报》1996年第1期33-38,共6页Chinese Journal of Materials Research

基　　金：国家自然科学基金

摘　　要：使用ＨＲＥＭ及ＳＴＭ技术检测了纳米Ｓｉ薄膜的微结构纳米Ｓｉ薄膜由大量的细微Ｓｉ晶粒以及大量的晶粒间界面区组成．这一特殊的结构造成纳米Ｓｉ薄膜具有较大的压阻效应及较高氢含量．本文分析讨论了薄膜微结构对其压阻效应的作用。In this report Authors employed the HREM and STM to detect the micro-structure of nc-Si:H films, which are fabricated by the PECVD deposition method. The nc-Si:H films are consisted with a mass of micro-grains and a great deal of interfaces among grains. The unique structrue character of nc-Si:H films is the main reason for the largest piezo-resistance effect and a higher value of hydrogen content in the films. The relationship of microstructure and the piezo-resistance effect of films were discussed. It is suggested that the nc-Si: H film may becbme an idealized sensor materials.

关 键 词：压阻效应 微结构 简支梁法 硅薄膜 纳米硅薄膜 

分 类 号：TN304.12[电子电信—物理电子学]