微波功率器件及其材料的发展和应用前景  

The Utilities and the Prospect of the Microwave Power Device

作　　者：文剑[1] 曾健平[1] 晏敏[1] 

机构地区：[1]湖南大学应用物理系,湖南长沙410082

出　　处：《电子与封装》2005年第11期1-8,共8页Electronics & Packaging

摘　　要：本文介绍了微波功率器件的发展和前景，对HBT、MESFET和HEMT微波功率器件的材料的特点和选取，以及器件的特性和设计做了分类说明。着重介绍了SiGe合金、InP、SiC、GaN等新型的微波功率器件材料。并对目前各种器件的最新进展和我国微波功率器件的研制现状及与国外的差距做了概述与展望。This paper introduces the utilities and the prospect of the microwave power device, and shows the design method and the property of some microwave power devices individually, which include the HBT, MESFET and HEMT And shows the property and the choice of these devices＇ materials as well. And emphasis on the introduction of some new types of microwave power device＇s material that include SiGe alloy, InP, SiC and GaN. It also descripts the current development of these devices and the progress of our county＇s current research and the gap between our country from the developed countries and gives the expectation in this field.

关 键 词：微波功率器件 设计 材料 HBT MESFET HEMT 

分 类 号：TN385[电子电信—物理电子学]