CMP过程中纳米级颗粒在芯片表面吸附状态控制  

Control of The Adsorption State of Nano-Size Particles on Wafer in CMP

作　　者：李薇薇[1] 刘玉岭[1] 周建伟[1] 王娟[1] 

机构地区：[1]河北工业大学微电子研究所,天津300130

出　　处：《电子工艺技术》2005年第6期344-348,共5页Electronics Process Technology

基　　金：国家自然科学基金资助项目(批准号:60176033);河北省自然科学基金资助项目(项目编号:502029)

摘　　要：化学机械全局平面化过程中各种颗粒的污染十分严重。随着时间增长,吸附状态由物理吸附转变为化学吸附最终形成键合。文章提出了一种优先吸附模型,是表面活性剂分子优先吸附在硅片表面,降低能量达到稳定不但可以有效控制颗粒在硅片表面的吸附状态,对已经吸附的颗粒可以起到解吸的作用。实验证明用表面活性剂对硅片进行处理,可以有效控制颗粒的吸附状态,对CMP清洗有重要作用。The particle contamination was very important. Adsorption state varied from physisorption to chemisorption, and linkage with wafer finally along with time. A kind of preference adsorption model that surfactant molecules adsorbed on wafer preferentially was introduced. Surfactant can reduce surface energy and control the adsorption state. Adsorbed particles can be desorbed from wafer surface. Experiments had proved that adsorption state can be controlled using surfactant, which was important to post CMP cleaning.

关 键 词：化学机械全局平面化 颗粒 吸附 键合 表面活性剂 

分 类 号：TN405[电子电信—微电子学与固体电子学]