应变Si调制掺杂NMOSFET电子面密度模型  

Electron-Sheet-Density Model in Strain-Si Modulation-Doped NMOSFET

作　　者：胡辉勇[1] 张鹤鸣[1] 戴显英[1] 王顺祥[1] 朱永刚[1] 区健锋[1] 俞智刚[1] 马何平[1] 王喜媛[1] 

机构地区：[1]西安电子科技大学微电子学院宽禁带半导体材料与器件教育部重点实验室,陕西西安710071

出　　处：《电子学报》2005年第11期2056-2058,共3页Acta Electronica Sinica

基　　金：国家模拟集成电路重点实验室基金(No.51439010904DZ0101);西安电子科技大学青年科研工作站基金(No.03011#)

摘　　要：应变Si(Strain Si)调制掺杂NMOSFET量子阱沟道中电子面密度直接影响器件的开关特性.本文通过求解泊松方程,建立了应变Si调制掺杂NMOSFET量子阱沟道静态电子面密度模型,并据此建立了器件阈值电压模型,利用MATLAB软件对该模型进行了数值分析.讨论了器件结构中δ-掺杂层杂质浓度和间隔层厚度与电子面密度和阈值电压的关系,分析了器件几何结构参数和材料物理参数对器件量子阱沟道静态电子面密度和阈值电压的影响.随着δ-掺杂层杂质浓度的减小和间隔层厚度的增加,量子阱沟道中电子面密度减小,阈值电压绝对值减小.The electron-sheet-density in the quantum well of Strain-Si modulation-doped NMOSFET（Metal-Oxide-Silicon Field Effect Transistor） affects switch performance. The model of electron-sheet-density in Strain-Si modulation-doped NMOSFET quantum well is established by solving Poisson equations, and the model of the threshold voltage is established. Then the models are analyzed by MATLAB when the device is static. The relations of the δ-doping-layer concentration and the space layer thickness to the electron- sheet-density and the threshold voltage are also discussed at static state. The influences of physical parameters of material and structure parameters of device on the electron-sheet-density and the threshold voltage are analyzed by using MATLAB. With decreasing δ-doping-layer concentration and increasing the space layer thickness, the electron-sheet-density and the absolute value of threshold voltage decrease.

关 键 词：应变硅 调制掺杂 电子面密度 阈值电压 

分 类 号：TN432[电子电信—微电子学与固体电子学]