脉冲MOS结构少子产生寿命的统一表征  

Unified Characterization for Minority Carrier Generation Lifetime of Pulsed MOS Structures

作　　者：何燕冬[1] 许铭真[1] 谭长华[1] 

机构地区：[1]北京大学微电子学研究所

出　　处：《电子学报》1996年第8期19-22,共4页Acta Electronica Sinica

摘　　要：本文提出了一种采用脉冲ＭＯＳ结构测量少子产生寿命的统一表征谱方法，此方法基于任何一种收敛弛豫过程均可以转换成一种衰减的指数函数的思想，应用差值取样原理获得脉冲ＭＯＳ结构瞬态电容差值谱，从谱图中我们可以直接得到关于少子产生寿命的信息．本文综合了众多脉冲ＭＯＳ结构测量少子产生寿命的物理模型，分析了不同模型之间的精细差别（＜１０％）．A unified spectral analysis method using pulsed MOS C-t characteristics has been presented in the paper, which can be used to determine the minority carrier generation lifetime. This method is based on an idea that any kind of convergent relaxation process can be expressed as the damped exponential function. Here we put forward a new method with the difference sampling principle, from the transient capacitance difference spectroscopy, we can directly get the information about the minority carrier generation lifetime. We investigated some currently accepted models for the minority carrier generation lifetime, made a comparison with these different models, and found that their maximum difference is less than 10%.

关 键 词：少子产生寿命 脉冲MOS电容 半导体器件 

分 类 号：TN301[电子电信—物理电子学]