一种超βNPN晶体管的研制  

Development of a Super β NPN Transistor

作　　者：阚玲[1] 欧宏旗[1] 

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2005年第6期689-692,共4页Microelectronics

摘　　要：阐述了一种超βNPN型晶体管的研制及实现批量生产的过程.该晶体管在VCE＝5 V、IC＝500 mA大电流下工作时,电流增益可达到900～1800,且器件的BVCEO、BVCBO耐压比较高,其中,BVEBO达15 V以上,完全满足低频大电流超高增益晶体管的实用要求.A super β NPN transistor is developed. And the volume production process of the device is described. Operating at high current （V CE=5 V and Ic=500 mA）, the transistor can achieve gains in the range from 900 to 1800. The device also has high BV CEO and BV CBO and especially a BV EBO up to 15 V, satisfying technical requirements of low frequency, large current and very-high gain transistors.

关 键 词：超β NPN晶体管 双极晶体管 半导体工艺 

分 类 号：TN322.8[电子电信—物理电子学]