AlGaN/GaN分布布拉格反射镜的设计与表征  

Design and Characterization of AlGaN/GaN Distributed Bragg Reflectors

作　　者：姬小利[1] 江若琏[1] 李亮[1] 谢自力[1] 周建军[1] 刘斌[1] 韩平[1] 张荣[1] 郑有炓[1] 龚海梅[2] 

机构地区：[1]南京大学物理系江苏省光电功能材料重点实验室,江苏南京210093 [2]中国科学院上海技术物理研究所,上海200083

出　　处：《激光与红外》2005年第11期888-890,共3页Laser & Infrared

基　　金：国家自然科学基金项目(No.60276031);重点基础研究规划项目(No.G20000683)资助

摘　　要：设计了反射中心波长为500nm的A l0.3Ga0.7N/GaN和A lN/GaN两种分布布拉格反射镜(DBR),并采用光学传递矩阵方法对其光谱反射率进行了理论上的模拟。采用金属有机物化学气相淀积(MOCVD)技术在蓝宝石衬底上制备了样品。实际测量的样品反射谱中有明显的反射峰,但峰值波长与理论设计有偏差,峰值反射率也比理论设计值偏低。SEM和AFM测量结果表明:这是由生长层厚与设计的偏差和界面不平整引起的。AlO3G%.TN/GaN and AlN/GaN distributed Bragg reflectors （DBR） with a target center wavelength of 500nm were designed, and simulation with a transfer-matrix-method （TMM） was performed to give their spectral refleetivity. The corresponding two samples were grown by metal-organic-chemical-vapor-deposition （MOCVD） on sapphire substrate. It shows from the measured reflectivity spectrum of each sample that obvious reflectance peak occurs, but the center wavelength has some deviation from the designed value and the peak reflectance value is lower than expected. These attribute to the variation of the real layer thickness and the uneven interfaces, which can be approved from the SEM and AFM measurement.

关 键 词：氮化镓 分布布拉格反射镜 光学传递矩阵方法 

分 类 号：O472.8[理学—半导体物理] TN304.23[理学—物理]