表面预处理对氧化锌薄膜质量的影响  

Effects of Surface Pretreatment on ZnO Thin Films Quality

作　　者：闫小龙[1] 刘大力[1] 石增良[1] 董鑫[1] 高忠民[1] 杜国同[1] 

机构地区：[1]吉林大学电子科学与工程学院集成光电子学国家重点实验室,吉林长春130012

出　　处：《发光学报》2005年第6期777-780,共4页Chinese Journal of Luminescence

基　　金：国家"863"计划资助项目(2001AA311130)

摘　　要：用MOCVD方法在c面蓝宝石衬底上生长ZnO薄膜。生长前衬底表面进行预处理,观察不同表面预处理对ZnO薄膜质量的影响。测量氧化锌的XRD谱,观察表面预处理后对氧化锌薄膜结晶质量的影响。室温下用325 nm的He-Cd激光器作为激发源测量ZnO薄膜的紫外发光谱,观察表面处理后对ZnO薄膜发光特性的影响。用HL5500 Hall System分别对ZnO薄膜的电学特性进行了测试。得到了ZnO薄膜的电阻率和霍尔迁移率,并得到氧气气氛处理后电阻率变小,霍尔迁移率变大;氮气气氛射频处理后电阻率变大,霍尔迁移率变小的结果。ZnO is a wide band-gap semiconductor with good electrical, optical and piezoelectric properties. ZnO has a large exciton binding energy of 60 meV, which is 2.4 times that of GaN. ZnO is extensively studied because of its potential applications in various fields, such as gas sensor, solar cells, photodetectors, light emitting diodes （LEDs） and laser systems etc. Especially, after optical pumped UV lasing of ZnO films was reported, ZnO has received more and more attention from researchers. ZnO fihns have been grown by many different methods, such as sputtering, molecular beam epitaxy （MBE） and metal organic chemical vapor deposition （MOCVD） and so on. Among them, MOCVD provides the advantage of growing high-quality films due to its versatility in controlling the various thermodynamic interactions. In order to obtain the high-quality ZnO films, the growth technique of using the buffer layer has been adopted in the growth process of ZnO films. However, there has been few reports on the effect of ZnO buffer layer thickness on the properties of ZnO thin films. ZnO thin films have been grown on c-axis orientated sapphire substrate with MOCVD technique. Before the growth, various pretreatments for the surface of the substrate were applied and their effects on quality of the samples were observed. By measuring X-ray diffraction of samples, we observed the effects on crystal quality of ZnO thin films after surface pretreatments. At room temperature, we investigated PL spectra of the samples by excitation of He-Cd laser at 325 nm and observed the effects of pretreating on luminescence characteristic of the samples. We tested electrical characteristic of the samples by HL5500 Hall system. By pretreating in oxygen, the resistivity of the film increased and Hall mobility declined. On the contrary, the resistivity of the film declined and Hall mobility increased by pretreating in nitrogen. The surface morphology, the structural and optical properties of ZnO films were improved by pretreating the surfaces of the subs

关 键 词：ZNO薄膜 金属有机化学气相沉积 表面预处理 

分 类 号：O472.3[理学—半导体物理] O482.31[理学—物理]