基于光刻胶回流特性的平面化工艺  

A Planarization Process Based on Reflowing Characteristic of Photoresist

作　　者：叶枝灿[1] 徐东[1] 王芸[1] 王莉 吴茂松 

机构地区：[1]上海交通大学微纳科学技术研究院微米/纳米加工技术国家重点实验室薄膜与微细技术教育部重点实验室,上海200030 [2]霍尼韦尔上海传感器实验室,上海200030

出　　处：《微细加工技术》2005年第4期12-15,30,共5页Microfabrication Technology

摘　　要：研究了一种利用光刻胶的回流特性去除表面的磨痕,使其表面平整化的方法,结合牺牲层结构可以非常简便地制备出微机电器件中各种悬臂梁结构。着重研究了光刻胶的前烘胶温度、回流温度、回流时间对回流效果的影响。通过大量的实验得到了较好的回流工艺,即光刻胶90℃下60 min前烘后,并在90℃下回流60 min,不但能通过机械抛光准确控制减薄厚度,而且还可以完全除去其表面的磨痕,获得平滑的表面结构。A new method using reflowing characteristic of photoresist to planarize PR（photoresist） is presented. The impact of prebake temperature, reflow temperature and reflow time on the effect of PR reflowing is studied. Through a large number of experiments, it is found that all the scratches on the PR surface are removed and the smooth surface sturctures are obtained when the PR was prebaked at 90 ℃ for 60 minutes and reflowed at 90℃ for 60 minutes. This process doesn＇t produce any defect to PR surface.

关 键 词：光刻胶 回流 平面化 牺牲层 

分 类 号：TN305.7[电子电信—物理电子学]