Growth and Characterisation of In AsSb Ternary Layers on (100) GaSb Substrates by LP-MOCVD  

GaSb衬底上InAs_xSb_(1-x)合金的低压MOCVD生长和表征(英文)

作　　者：李晓婷[1] 汪韬[1] 王警卫[1] 王一丁[2] 殷景致[2] 赛小锋[1] 高鸿楷[1] 张志勇[3] 

机构地区：[1]中国科学院西安光学精密机械研究所 [2]吉林大学电子工程系,长春130023 [3]西北大学,西安710069

出　　处：《Journal of Semiconductors》2005年第12期2298-2302,共5页半导体学报（英文版）

基　　金：国家高技术研究发展计划(批准号:2002AA313080);国家自然科学基金(批准号:60378020)资助项目~~

摘　　要：InAsSb alloys are grown on n-（100） GaSb （Te-doped） and GaAs substrates by the MOCVD using TMIn, TMSb,and AsH3 sources. The influence of growth parameters such as temperature, Ⅴ/Ⅲ ratio,and buffer layer on the surface morphology and solid composition is studied. The surface morphology is observed by AFM and SEM. The As and Sb concentrations in the solid are characterized by electron microprobe analysis. The crystalline quality of the InAsSb epilayer is characterized by double-crystal X-ray rocking curve diffraction. The electrical properties are observed by the （Van der Pauw） Hall technique at room temperature. An InAsSb epitaxy layer with mirror-like surface and lattice mismatch of 0.4% is obtained.采用自制的低压金属有机化学气相淀积设备,用三甲基镓、三甲基铟作为Ⅲ族源,三甲基锑和砷烷作为V族源在(100)面GaSb和GaAs单晶衬底上分别外延生长了InAsSb材料.用X射线双晶衍射、原子力显微镜、扫描电镜和电子探针能谱仪等对材料特性进行了表征,研究了生长温度、Ⅴ/Ⅲ比、过渡层等生长参数对外延层质量的影响.获得了与GaSb衬底晶格失配度为0.4%的表面光亮且晶体质量较好的InAs0.85Sb0.15外延层.

关 键 词：LP-MOCVD GASB INASSB GROWTH 

分 类 号：TG174.44[金属学及工艺—金属表面处理]