全耗尽SOIMOSFET及CMOS／SOI电路的研究  

Fabrication of Fully Depleted SOI MOSFET'S and CMOS/SOI IC's

作　　者：张正璠 刘永光[1] 

机构地区：[1]电子工业部第24研究所

出　　处：《微电子学》1996年第3期143-145,共3页Microelectronics

摘　　要：采用ＳＩＭＯＸ材料，研制了一种全耗尽ＣＭＯＳ／ＳＯＩ模拟开关电路。研究了全耗尽ＳＯＩＭＯＳ场效应晶体管的阈值电压与背栅偏置的依赖关系，对漏源击穿的Ｓｎａｐｂａｃｋ特性进行了分析。介绍了薄层ＣＭＯＳ／ＳＩＭＯＸ制作工艺，给出了全耗尽ＣＭＯＳ／ＳＯＩ电路的测试结果。Fully depleted SOI MOSFET's were fabricated using SIMOX and a CMOS/SOI analog switch was made based on SOI/MOSFET' s. The dependence of threshold voltage of fully depleted SOI MOSFET's on the back-gate bias was investigated. The snapback of drain-source breakdown was characterized. The thin CMOS/SIMOX process is brifly introduced' Test results of the developed fully depleted CMOS/SOI circuit are given.

关 键 词：半导体材料 半导体器件 SOI MOSFET 模拟开关 

分 类 号：TN386.103[电子电信—物理电子学]