MEMS器件气密性封装的低温共晶键合工艺研究  

Study of low temperature eutectic bonding process for MEMS hermetic package

作　　者：张东梅[1] 丁桂甫[1] 汪红[1] 姜政[1] 姚锦元[1] 

机构地区：[1]上海交通大学微纳科学技术研究院微米/纳米加工技术国家重点实验室薄膜与微细技术教育部重点实验室,上海200030

出　　处：《传感器与微系统》2006年第1期82-84,共3页Transducer and Microsystem Technologies

基　　金：国家自然科学基金资助项目(10377009)

摘　　要：介绍了一种采用Pb-Sn共晶合金作为中间层的键合封装技术,通过电镀的方法在芯片与基片上形成Cr/N i/Cu/Pb-Sn多金属层,在温度为190℃、压强为150 Pa的真空中进行键合,键合过程不需使用助焊剂,避免了助焊剂对微器件的污染。试验表明:这种键合工艺具有较好的气密性,键合区合金分布均匀、无缝隙、气泡等脱焊区,键合强度较高,能够满足电子元器件和微机电系统(MEMS)可动部件低温气密性封装的要求。A fluxless bonding technique using eutectic Pb-Sn alloy as joint is presented. Cr/Ni/Cu/Pb-Sn multilayer on substrate and chip is electroplated, then bonded at 190 ℃ and 150 Pa in vacuum. This fluxless bonding process can prevent micro device being polluted. This bonding process is hermetic. The thickness of the joint is found to be very uniform along the entire cross section. The strength of the joint is high, it can meet the requirement of hermetic packaging of electronic device and MEMS movable parts at low temperature.

关 键 词：微机电系统 气密性封装 共晶键合 低温封装 

分 类 号：TN305.99[电子电信—物理电子学]